Substrate Biasing Approach to Generate Artificial Oxygen Vacancy for Stable Nitrogen-Doped IGZO Thin-Film Transistor | Intelligent Semiconductor and Wearable Devices

Substrate Biasing Approach to Generate Artificial Oxygen Vacancy for Stable Nitrogen-Doped IGZO Thin-Film Transistor

2021/07/01
Jueun Kim, Seongmin Park, Taewon Seo, Suwon Seong, Juyoung Yun, Gilsu Jeon, Yoonyoung Chung
IEIE Summer Conference, 390 (2021)
Transistor
IEIE Summer Conference, Jeju, Korea

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